Speaker
Description
Silicon sensors for the future generation of collider physics experiments will require high performances on spatial ($<$ 10 $\mu$m) and time resolution (20-50 ps) with a radiation tolerance up to fluences of $10^{17}$n$_{eq}$. To meet these challenges, a new silicon sensor architecture has been proposed, enabling internal gain without relying on doping, the Silicon Electron Multiplier (SiEM). The SiEM incorporates a set of metallic electrodes within the silicon substrate which are used to create a high electric field region that provides charge multiplication. Simulations of SiEM configurations with TCAD and Garfield++ show a promising performance with a gain exceeding 10. Metal assisted chemical etching is a process shown to be compatible with the desired geometry, and is used to make a demonstrator. Results from a production comprising pillars with a radius of 500nm and a height of up to 8 ${\mu}$m on a hexagonal grid with a 1.5$\mu$m pitch will be presented along with key results from the simulations.
